1 •外延的命令epitaxy,参数及其说明如下:
1.1外延的例子
1.3光刻仿真
•OPTOLITH模块可对成像(imaging),光刻胶曝光(exposure),光刻胶烘烤(bake)和光刻胶显影(development)等工艺进行精确定义
••OPTOLITH提供光阻的库及其光学性质和显影时的特性(这些可根据需要修改)
••主要的小工艺步骤有:
mask,illumination,projection,filter,layout,Image,bake,expose和develop
go athena
set lay_left=-0.5
set lay_right=0.5
illuminationg.line
illum.filterclear.fil circle sigma=0.38
projectionna=.54
pupil.filterclear.fil circle
layoutlay.clearx.lo=-2 z.lo=-3 x.hi=$lay_left z.hi=3
layout x.lo=$lay_right z.lo=-3 x.hi=2 z.hi=3
imageclear win.x.lo=-1 win.z.lo=-0.5win.x.hi=1 \
win.z.hi=0.5 dx=0.05 one.d
structureoutfile=mask.strintensity mask
tonyplotmask.str
linex loc=-2 spac=0.05
linex loc=0 spac=0.05
linex loc=2 spac=0.05
liney loc=0 spac=0.05
liney loc=2 spac=0.2
initsilicon orient=100 c.boron=1e15two.d
depositnitride thick=0.035 div=5
depositname.resist=AZ1350Jthick=.8 divisions=30
rate.devname.resist=AZ1350Ji.linec.dill=0.018
structureoutfile=preoptolith.str
tonyplot preoptolith.str
expose dose=240.0 num.refl=10
baketime=30 temp=100
developkimtime=60 steps=6 substeps=24
structureoutfile=optolith.str
tonyplot optolith.str
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